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INCREASED-FUNCTIONALITY VLSI-COMPATIBLE DEVICES BASED ON BACKWARD-DIODE FLOATING-BASE Si/SiGe HETEROJUNCTION BIPOLAR TRANSISTORS

机译：基于后向二极管浮动基极si / siGe异质结双极晶体管的增加功能VLsI兼容器件

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Z. S. Gribnikov; S. Luryi; A. Zaslavsky;
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1. VLSI-compatible processing and low-voltage operation of multiemitter Si/SiGe heterojunction bipolar transistors [J] . A. Zaslavsky, M. Mastrapasqua, C. A. King, International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics . 2000,第1期

机译：多发射体Si / SiGe异质结双极晶体管的VLSI兼容处理和低压操作
2. Low-Capacitance Low-Voltage Transient Voltage Suppressor Using Diode-Activated SiGe Heterojunction Bipolar Transistor in SiGe Heterojunction Bipolar Transistor Bipolar Complementary Metal-Oxide-Semiconductor Process [J] . Sheng-Huei Dai, Jeng-Jie Peng, Chia-Cheng Chen, Japanese journal of applied physics . 2009,第4issue2期

机译：SiGe异质结双极晶体管双极互补金属氧化物半导体工艺中使用二极管激活的SiGe异质结双极晶体管的低电容低电压瞬态电压抑制器
3. A Double-Heterojunction Bipolar Transistor Having a Degenerately Doped Emitter and Backward-Diode Base Contact [J] . Cohen-Elias D., Kraus S., Cohen S., Electron Devices, IEEE Transactions on . 2011,第7期

机译：具有退化掺杂的发射极和后向二极管基极接触的双异质结双极晶体管
4. VLSI-COMPATIBLE PROCESSING AND LOW-VOLT AGE OPERATION OF MULTIEM1TTER Si/SiGe HETEROJUNCTION BIPOLAR TRANSISTORS [C] . A. ZASLAVSKY, M, MASTRAPASQUA, 1999 Advanced Workshop on "Frontiers in Electronics", May 31 - Jun 4, 1999, Grenoble AREA, France . 1999

机译：多层Si / SiGe异质结双极晶体管的VLSI兼容工艺和低电压运行
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion [O] . A. Martí, A. Luque -1

机译：用于高效光伏转换的三端异质结双极晶体管太阳能电池
7. VLSI-compatible processing and lowvoltage operation of multiemitter Si/SiGe heterojunction bipolar transistors [O] . A. Zaslavsky, M. Mastrapasqua, C. A. King, 2000

机译：多发射极si / siGe异质结双极晶体管的VLsI兼容处理和低压操作
8. Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms [R] . Mitchell, G. A. 2011

机译：硅锗（siGe）异质结双极晶体管（HBT）在移动技术平台中的作用

INCREASED-FUNCTIONALITY VLSI-COMPATIBLE DEVICES BASED ON BACKWARD-DIODE FLOATING-BASE Si/SiGe HETEROJUNCTION BIPOLAR TRANSISTORS

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